| PART |
Description |
Maker |
| IGD01N120H2 IGP01N120H207 |
HighSpeed 2-Technology
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| IKB01N120H2 |
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
| TSL253 TSL254 |
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
PRECISION HIGHSPEED LIGHTTOVOLTAGE CONVERTER
|
TAOS
List of Unclassifed Manufacturers
ETC
|
| SIGC12T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC81T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC14T60SNC |
IGBT Chip in NPT-technology 600V NPT technology 100渭m chip short circuit prove
|
Infineon Technologies AG
|
| SIGC144T170R2C SIGC144T170R2C09 |
IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip
|
Infineon Technologies AG
|
| IKB01N120H2E3045A IKP01N120H2 |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT TO220
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
|
Infineon
|
| IRF7101PBF IRF7101TRPBF IRF7101PBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Adavanced Process Technology
|
IRF[International Rectifier]
|
